大功率晶体管和集成电路的热过程分析

Analysis of the Thermal Process ofthe Large Power Transistor and Integrated Circuit

本文从分析晶体管的热过程入手 ,得出了晶体管的热阻Rt 与最大允许集电极耗散功率Pcm的关系式。再通过对晶体管散热途径的分析及前面所得的关系式 ,得出了大功率晶体管及集成电路为什么要安装散热器。这种分析方法逻辑合理 ,过程清楚 ,理论充分 ,这种分析方法以前是没有的。

This article begins with the analyses of the transistor thermal process and then presents the formula of transistor thermal resistance (R\-t) and the max collector consuming power (P\-\{cm\}) permitted. Subsequently, based on the analyses of the way of transistor thermal radiation and the formula mentioned above, the indispensability of installing of radiator in large power transistor and integrated circuit is elucidated. The way of this kind of analyses, which is unprecedented, is characterized with reasonable logic, clear process and adequate theories.