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Advances in Rare Earth Application to Semiconductor Materials and Devices 被引量:1

Advances in Rare Earth Application to Semiconductor Materials and Devices
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摘要 The development of rare earths (RE) applications to semiconductor materials and devices is reviewed. The recent advances in RE doped silicon light emitting diodes (LED) and display materials are described. The various technologies of incorporating RE into semiconductor materials and devices are presented. The RE high dielectric materials, RE silicides and the phase transition of RE materials are also discussed. Finally, the paper describes the prospects of the RE application to semiconductor industry. The development of rare earths (RE) applications to semiconductor materials and devices is reviewed. The recent advances in RE doped silicon light emitting diodes (LED) and display materials are described. The various technologies of incorporating RE into semiconductor materials and devices are presented. The RE high dielectric materials, RE silicides and the phase transition of RE materials are also discussed. Finally, the paper describes the prospects of the RE application to semiconductor industry.
作者 屠海令
出处 《Journal of Rare Earths》 SCIE EI CAS CSCD 2004年第5期571-575,共5页 稀土学报(英文版)
基金 ProjectsupportedbyNationalHighTechnologyProgramofChina ( 2 0 0 2AASZ1110 )
关键词 SEMICONDUCTOR MATERIALS DEVICES APPLICATION rare earths semiconductor materials devices application rare earths
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