硅基光电集成器件研究进展

Progress of silicon based optoelectronic integrated devices

随着器件结构与制作工艺的不断创新与完善 ,硅基发光器件已经可以实现室温下的有效工作 ,外量子效率可达到 0 .1% ;低功耗的硅基高速调制器件的调制速率达到 1GHz以上 ;而硅基光探测器对 130 0nm与 15 5 0nm波长的探测响应度也已分别达到了 0 .16mA/W和 0 .0 8mA/W .文章对硅基光电器件的研究进展情况进行了概述 。

With the successive progress and improvements in device design and fabrication, silicon based light-emitting devices can now work efficiently at room temperature, with an external quantum efficiency of 0 1%. Silicon based modulators with low power consumption can attain a modulation speed as high as 1GHz, and newly reported silicon based optical detectors can detect wavelengths of 1300nm and 1550nm with a responsivity of 0.16mA/W and 0.08mA/W, respectively. The latest achievements in silicon based optoelectronic integrated devices are reviewed, and their structures and principle of operation are explained and analyzed.