摘要
根据半导体材料的性能参数,对多晶CdS/Cu_2S薄膜太阳电池在各种浓度下的光伏特性作了较深入的分析和计算。计算中考虑到耗尽区宽度的变化以及内表面复合损失对光电流J_L的影响,同时还用Rotlwarf晶界复合损失模型计算了晶粒度对光电流及光伏特性的影响。存在一个最佳Cu_2S受主浓度N_a=10^(15)cm^(-3),单晶和晶粒度R=3μm的多晶电池,其转换效率分别为13.6%和13.3%。
Calculation and analysis of the photovoltaic characteristics have been achievel for various concentrations of polycrystalline CdS/Gu2S heterjunction solar cell. Using Rothwarf's grain boundary recombination-lose model, we have abtained the conversion efficiency 13.6%, and the short-circuit current density 28.34 mA/cm2, the open-circuit Voltage 0.6V and the fill factor 80.4% respectively. Our major results are as follows:The effect of doping impurity density Na on the light generated current JL* is much more important than the effect of grain size R.The doping impurity density has a optimal value for which the light generated current reaches its maximum value.After corrected concerning to the experimental conditions, the resultant efficiencg 9.46-11.59% is close to the lately reported experimental value 9.15%.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
1993年第4期317-324,共8页
Acta Energiae Solaris Sinica
基金
冶金部资助项目
关键词
太阳能电池
异质结
计算
CdS/Cu2S
solar cell, polycrystalline CdS/Cu2S. heterjunction, calculation