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多晶CdS/Cu_2S异质结太阳电池光电流及转换效率的计算 被引量:2

CALCULATION AND ANALYSIS FOR THE PHOTOELECTRIC CURRENT AND CONVERT EFFICIENCY OF THE POLYCRYSTALLINE CdS/Cu_2S HETERJUNCTION SOLAR CELL
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摘要 根据半导体材料的性能参数,对多晶CdS/Cu_2S薄膜太阳电池在各种浓度下的光伏特性作了较深入的分析和计算。计算中考虑到耗尽区宽度的变化以及内表面复合损失对光电流J_L的影响,同时还用Rotlwarf晶界复合损失模型计算了晶粒度对光电流及光伏特性的影响。存在一个最佳Cu_2S受主浓度N_a=10^(15)cm^(-3),单晶和晶粒度R=3μm的多晶电池,其转换效率分别为13.6%和13.3%。 Calculation and analysis of the photovoltaic characteristics have been achievel for various concentrations of polycrystalline CdS/Gu2S heterjunction solar cell. Using Rothwarf's grain boundary recombination-lose model, we have abtained the conversion efficiency 13.6%, and the short-circuit current density 28.34 mA/cm2, the open-circuit Voltage 0.6V and the fill factor 80.4% respectively. Our major results are as follows:The effect of doping impurity density Na on the light generated current JL* is much more important than the effect of grain size R.The doping impurity density has a optimal value for which the light generated current reaches its maximum value.After corrected concerning to the experimental conditions, the resultant efficiencg 9.46-11.59% is close to the lately reported experimental value 9.15%.
出处 《太阳能学报》 EI CAS CSCD 北大核心 1993年第4期317-324,共8页 Acta Energiae Solaris Sinica
基金 冶金部资助项目
关键词 太阳能电池 异质结 计算 CdS/Cu2S solar cell, polycrystalline CdS/Cu2S. heterjunction, calculation
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参考文献3

  • 1王给祥,太阳能学报,1988年,9卷,2期,179页
  • 2赵富鑫,太阳电池及其应用,1985年
  • 3刘恩科,半导体物理学,1984年

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