摘要
用簧片振动法测量了GD a—S_1:H薄膜的内耗。在一170～100℃范围内观察到3个内耗峰——P_1、P_2和P_3。测量结果表明:P_1和P_2峰为驰豫型内耗峰,激活能分别为0.62ev和0.45ev。对样品进行250～300℃退火后,在—70～—30℃区间又观察到一新驰豫型内耗峰,激活能为0.22ev。分析认为P_1由双空位及复合缺陷造成,P_2由单空位造成,P_3可能由线缺陷造成,退火后新出的峰是晶界峰,从而提出a—Si:H中可能的缺陷模式为单空位、双空位、复合缺陷、线缺陷和晶界等。
This paper studies the internal friction of GD a—Si : H films over temperature range from-170℃～100℃ by the reed vibrating method. Three peaks—P_1、P_2 and P_3 are observed. P_1 and P_2 are relaxatioin peaks with activation energy 0.62eV and 0.45ev respectively. After annealing at 250℃～300℃ ,a new relaxation peak is observed with activation energy 0.22eV. According to the analysis, the arthors conclude that P_1 is caused by divacancies or composite defects,P_2 by monovacancies, P_3 by linear defects, the new peak appearing after annealing at 250℃～300℃ may be grain boundary peak. So it is suggested that the defect models in a-Si : H films may be vacancy,divacancy or composite defect ,linear defect and grain boundary.
