摘要
用OMA-Ⅲ型光学多道分析仪对Si的激光拉曼谱进行了检测,通过综合提高信噪比的实验手段,得到了满意的结果。并对用OMA-Ⅲ进行离子注入过程中二次荧光谱的测定的可行性进行了讨论。
The Raman laser spectrum of Si crystal was tested and obtained by the optical multichannal analyzer. The possibility of studingthe second photoluminescence distribution during reactive ion beam etching of Si stargets by the OMA was discussed.
关键词
信噪比
硅
单晶
散射谱
光谱学仪器
Laser Raman Spectrometry Optical Multichannel Analyzer Increase the Singnal to Noise Ratio
