考虑量子化效应的MOSFET阈值电压解析模型

An analytical model of MOSFET threshold voltage with considiring the quantum effects

根据改进后的三角势阱场近似 ,并考虑量子化效应 ,提出了一种基于物理的阈值电压解析模型 ,给出了MOSFET的阈值电压解析表达式 ,并与经典理论和数值模拟结果进行了比较 .

Based on the improved approximation of modified triangular potential well, a physical-based model of MOSFETs threshold voltage is presented, as well as its analytical formulation. The new model takes quantum effects into account for future generation MOS devices and integration circuits. The calculated results by using the new model agree with the simulation results very well.