用于高灵敏度红外探测器的超薄硅膜的研制

Fabrication and research of very thin Si membrane for the high sensitivity infrared detector

超薄、平整的硅膜对于制作高灵敏度红外探测器是非常重要的。这种超薄硅膜的各向异性腐蚀技术,包括有机溶液EPW和无机溶液KOH及KOH+IPA(异丙醇)。从腐蚀速率、腐蚀表面质量、腐蚀停特性、腐蚀边缘形貌及腐蚀工艺的角度分析比较了两种腐蚀系统,分别制作出了约1μm厚的平整超薄硅膜,并研究了不同掩膜材料在腐蚀液中的抗蚀性,为高灵敏度红外探测器的制作奠定了工艺基础。

Very thin and flat silicon membrane is the most important part for fabricating high sensitivity infrared detectors. The investigation of anisotropic etching of silicon with organic (EPW) and inorganic (KOH, KOH+IPA) solutions is presented to fabricate this very thin Si membrane. These two etching technologies are compared in point of the etching rate, the quality of etched surface, etch-stop character, the morphology of etching edges and etching procedures. Very thin silicon membranes of less lμm thick are fabricated with these technologies respectively. The mask materials resistant in etching solutions are presented. These works provide the useful technology foundation for the fabrication of the high sensitivity infrared detector.