摘要
在高浓度氧化铝溶液二段脱硅中,使用HCAC(水合碳铝酸钙)作为晶种,研究反应时间、HCAC用量、氧化钙烧制温度、碳酸钠用量对脱硅效果的影响.高浓度铝硅酸钠溶液脱硅时,HCAC的最佳合成条件:用600℃烧制的1.5gCaO与2.5g碳酸钠反应制备HCAC;最佳脱硅条件:在200mL含硅铝钠溶液中HCAC加入量为7.0g,脱硅时间为2h,脱硅效果较好,硅量指数可达1000以上,基本上可以满足氧化铝生产实践要求.
HCAC was applied as seed for deep desilication in high concentration of aluminate solution. The time of reaction, quantity of HCAC, sintering temperature of CaO and amount of Na_2CO_3were studied on results of two-stage desilication. The best condition of HCAC preparation was obtained that HCAC was made by 1.5 g CaO sintered at 600 ℃ plus 2.5 g Na_2CO_3. The best conditions of desilication in 200 mL sodium SiO_2-containing aluminate solutions were that quantity of HCAC is 7.0 g, the time of desilication is 2 h. Results of desilication are better and basic requirement of experiment will be satisfied
出处
《沈阳化工学院学报》
2004年第4期252-254,共3页
Journal of Shenyang Institute of Chemical Technolgy
关键词
铝酸钠溶液
二段脱硅
HCAC
sodium aluminate solutions
two-stage desilication
HCAC
