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锆离子轰击对纯锆腐蚀行为的影响 被引量:5

INFLUENCE OF Zr-ION IMPLANTATION ON THE CORROSION BEHAVIOR OF ZIRCONIUM
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摘要 为了研究自离子轰击对纯锆耐蚀性的影响,用MEVVA源对纯锫样品进行了1×1015至2×1017ions/cm2的自离子轰击,注入温度为170℃,加速电压为50 kV.用X射线光电子谱(XPS)对注入表面各元素进行价态分析;用Auger电子能谱(AES)分析氧化膜厚度.三次极化测量用来评价轰击样品在1 mol/L H2SO4溶液中的耐蚀性.用掠射X射线衍射(GAXRD)分析自离子轰击造成的氧化膜相转变.研究表明: 5×1016 Zr ions/cm2自离子轰击样品的耐蚀性最好.对自离子轰击纯锆的腐蚀行为机理进行了讨论. In order to investigate the affect of self-ion bombardment on the aqueous corrosion behavior of zirconium, the specimens were implanted by zirconium ions with a fluence range from 1 X 10(15) to 2x10(17) ions/cm(2) at about 170 degrees C, using a MEVVA source at an extractation voltage of 50 kV. The valence of the surface layer was analyzed by X-ray photoemission spectroscopy (XPS); the thickness of the oxide film was measured by Auger electron spectroscopy (AES). Three-sweep potentiodynamic polarization measurement was used to value the aqueous corrosion resistance of implanted zirconium in 1 mol/L H2SO4 solution. Glancing angle X-ray diffraction (GAXRD) was employed to determine the phase transformation due to the self-ion implantation in the oxide films. It was found that the aqueous corrosion resistance of zirconium implanted with 5 x 10(16) Zr ions/cm(2) is the best in all the samples. Finally, the mechanism of the corrosion behavior of the self-ion implanted zirconium is discussed.
出处 《金属学报》 SCIE EI CAS CSCD 北大核心 2005年第2期185-190,共6页 Acta Metallurgica Sinica
基金 国家重点基础研究发展规划资助项目G2000067207-1
关键词 纯锆 耐蚀性 自离子轰击 动电位极化 相转变 Zr corrosion resistance self-ion implantation potentiodynamic polarization phase transformation
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  • 1Adamson A B. ASTM STP, 1974; 551:215.
  • 2Etoh Y, Shimada S, Kikuchi K. J Nucl Sci Technol, 1992;29(12): 1173.
  • 3Yang W J S. J Nucl Mater, 1998; 158:71.
  • 4Lefebvre F, Lemaignan C. J Nucl Mater, 1990; 171:223.
  • 5Pecheur D, Lefebvre F, Motta A T, Lemaignan C. J Nucl Mater, 1993; 205:445.
  • 6Bai X D, Wang S G J, He F, Chen H M, Fan Y D. Chin J Nucl Sci Eng, 1996; 16(3): 243.
  • 7He J H, Bai X D, Ma C L, Chen H M. Nucl Instrum Methods B, 1995; 100:59.
  • 8Tian W, Cai W P, Li J, Wu R. Mater Sci Eng A, 1989;116:5.
  • 9Bai X D, Zhu D H, Liu B X. Nucl Instrum Methods in Phys Res B, 1995; 103:440.
  • 10Stimming U. Electrochem Acta, 1996; 31(4): 415.

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