论吉赫横电磁室(GTEM)的理论与设计

Theory and Design Method of the GTEM Cell

新型GTEM室可克服传统横电磁室可用频率上限低的缺点,这是由于其结构渐变、避免表面锐棱转折和引入吸波材料,故可用于2GHz或更高频率。本文论述GTEM的原理和设计方法,特别关注该结构的特性阻抗的规律。文中指出了准静态分析法的局限,建议从导波系统的更普遍、更严格的观点处理这一问题。

The new GTEM cell permits one to overcome the UUFL restriction of the traditional TEM Transmission Cell. The absence of edges on the external surface,its tapering,and the use of absorbing material ought to ensure operation up to 2 GHz at least. In this paper, we discuss the principle and the design method of the GTEM Cell,and deal with the analysis of the characteristic impedance of the tapering structure. The limit of the quasi—state analysis scheme. Hence, we obtain a generalized idea about this problem. The treatment is rigorous.and the theory of the guided—waves system is required.