金属化电迁移失效的圆片级监控技术

The Wafer Level Monitoring Techniques of Metallization Electromigration Failure

介绍3种圆片级金属化电迁移可靠性测试技术:(1)金属击穿能量技术;(2)标准圆片级电迁移加速测试技术;(3)标准圆片级等温焦耳热电迁移测试技术实验结果表明它们优于传统的电迁移寿命试验,可用作在线监控.

Three wafer level r■liability test methods for electromigration failure of metal lines are introduced: (1) breakdown energy of m■tal(BEM) Technique; (2) standard wafer-level electromigration acceleration test (SWEAT); (3) wafer-level isothermal jonle-heated electromigration test. The results are pretty agree with that of the conventional electromig ation life test,so that they may be used as in-line production monitors for electromigration.