采用多次离子注入调整亚微米CMOS电路的阈电压

Threshold Voltage Modulation Technology Using Multiple Ion Implantion for Submicron CMOS

采用多次离子注入来调整亚微米CMOS的NMOS和PMOS管的阈值电压是研究亚微米CMOS电路的关键.浅离子注入调节表面掺杂浓度以达到调整阈值电压的目的.深离子注入调整源漏穿通电压.与LDD、硅化物工艺相合,已研制出0.5μm的CMOS 27级环振电路,门延迟为130ps.

The threshold voltage modulation technology using multiple ion implantion is the key processes of submicron CMOS. Shallow ion implantation modulates surface impurity density for modulating threshold voltage. Deep ion implantation modulates punch -through voltage. Using LDD silicide, the gate propagation deley of 0.5μm CMOS 27 steps ring oscillator is 130ps.