摘要
Bi4 Ti3O1 2 是典型的层状钙钛矿结构铁电材料 ,具有优良的压电、铁电、热释电和电光等性能 ,可广泛应用于铁电存储器、压电和电光等器件。本文在硅衬底上利用溶胶凝胶法制备出Bi4 Ti3O1 2 铁电薄膜 ,并且对其性能进行了研究。测量不同退火温度下得到的Ag BTO p Si结构的C V曲线 ,结果表明Bi4 Ti3O1 2 薄膜在合适的制备工艺下可望实现极化型存储。
Bismuth Titanate (Bi_4Ti_3O_ 12) thin films were fabricated on p-Si substrates by Sol-Gel method. The effect of annealing temperature on physical structure and ferroelectric properties of Bi_4Ti_3O_ 12 thin films has been investigated. The X-ray diffraction (XRD) results show that the single perovskite phase of Bi_4Ti_3O_ 12 can be obtained at 600°C. This metal-ferroelectric-semiconductor structure showed a capacitor-voltage (C-V) hysteresis due to ferroelectric polarization.
出处
《材料科学与工程学报》
CAS
CSCD
北大核心
2005年第1期74-76,共3页
Journal of Materials Science and Engineering
基金
ThisworkissupportedbytheNationalNaturalScienceFundationofChina (NO .60 1 71 0 1 2 ) .
