用热蒸发法制备CdS纳米带

Manufacture of CdS Nano-ribbons by Thermal Evaporation

在外加电场的作用下 ,用物理热蒸发法制备出了定向生长的硫化镉纳米带。借助扫描电子显微镜(SEM)、X射线能谱分析仪 (EDX)和透射电镜 (TEM)对硫化镉纳米带的形貌、成分和晶体结构进行了分析。结果表明 :当外加电场为 4 0 0V ,蒸发温度为 1 1 5 0℃ ,环境压力为 1 5 0torr,气体流量为 5 0SCCM时 ,可制备出平均宽度为 2 5 μm ,厚80nm ,长达几毫米的定向生长的硫化镉纳米带。

With the use of an electrical field , CdS nano-ribbons have been successfully produced by thermal evaporation of the powder of CdS and CdO mixture. The morphology, composition and crystal structure of the nano-ribbons have also been analyzed by scanning electron microscopy(SEM)、X-ray energy dispers spectrum(EDX) attached to SEM and transmission electron microscopy(TEM).The results showed that at the direct current of(DC) 400 V, the evaporation temperature of 1150 ℃,ambient pressure of 150 torr, gas flow of 50 SCCM, the CdS nano-ribbons with the size of 1-5mm×25μm×80nm can be easily obtained.