摘要
采用金属有机分解法(MOD)在LNO(100)／Si衬底上制备了Pb0.985La0.01(Zr0.4Ti0.6)O3(PLZT)铁电薄膜.在薄膜的快速退火过程中,增加了一个中间温度预退火过程,并研究了该过程对薄膜晶型结构和铁电性能的影响.结果发现,中间温度预退火过程可以影响薄膜对晶型结构的选择.没有中间温度预退火过程的薄膜,显示出(100)择优取向;而经中间温度预退火的薄膜则表现为随机取向.对薄膜铁电性能的研究表明,没有中间温度预退火过程的薄膜的铁电性能较差,经380℃预退火的薄膜显示出最佳的铁电性能.晶型结构取向和缺陷是影响PLZT薄膜铁电性能的两个主要因素.
Pb0.985La0.01(Zr,Ti)O-3(PLZT) thin films were deposited onto LNO(100)/Si substrates by metal-organic decomposition (MOD) technique. An intermediate pre-annealing process was added into the rapid thermal anneal (RTA) process to treat the films. Effects of intermediate pre-annealing process on crystallinity and ferroelectricity were investigated. The results show that the intermediate pre-annealing process can affect the selection of crystalline texture. PLZT thin film without intermediate pre-annealing process displays (100)-preferential orientation. However, PLZT thin films with intermediate pre-annealing process show random orientation. PLZT thin film without intermediate pre-annealing process shows the worse ferroelectricity. PLZT thin film with intermediate pre-annealing process of 380degreesC displays the best properties. The ferroelectricity is mainly attributed to both the crystallinity and the defects in the PLZT thin films.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
2005年第1期163-168,共6页
Journal of Inorganic Materials
基金
国家自然科学基金(60221502
60223006)上海市A-M基金(0306)
关键词
PLZT薄膜
中间温度预退火
晶型结构
铁电性能
PLZT thin films
intermediate pre-annealing process
crystallinity
ferroelectricity
