WC-Co硬质合金基体上高附着力金刚石薄膜的制备

Highly Adherent Diamond Film Deposited onto WC-Co Cemented Carbide Substrate

采用微波等离子体化学气相沉积(CVD)法在WC-Co硬质合金基体上制备金刚石膜,研究了TiNx中间层的引入对金刚石薄膜质量及其附着性能的影响.结果表明,在酸浸蚀脱钴处理的基础上,通过预沉积氮含量呈梯度变化的TiNx中间过渡层,可在硬质合金基体上制备出高质量的金刚石薄膜;压痕法测试其临界载荷达1000N.

Diamond films were deposited onto WC-Co cemented carbide substrate by using microwave plasma chemical vapor deposition (CVD). The effects of TiNx interlayer introduced on the diamond film quality and its adhesion to the substrate were investigated. The results show that by pre-depositing TiNx interlayer in which nitrogen concentration changes gradually, the diamond film on the cemented carbide substrate etched by acid solution has very good quality; and its critical load measured by indentation test, is as high as 1000N.