精密掺杂技术的发展与应用

Advances in Fine Doping Techniques and Their Applications

微电子学和光电子学的迅速发展,要求能对掺入半导体晶片中的杂质数量、深度和浓度分布进行精密控制,因此原子平面掺杂和超浅层掺杂技术已成为发展新器件的重要工艺之一。本文介绍了当前三种主要的浅层或薄层平面掺杂技术的特点,并简要论述了它们在光电子器件和集成电路中的应用。

With the rapid progress in microelectronic and optoelectronic devices, a precise control is required of the amount, concentration and depth profiles of doped elements in semiconductor wafers. As a result, the atomic planar doping and ultra-shallow layer doping have become one of the key technologies for the development of novel devices. Three main techniques for ultrashallow or thin layer atomic planar doping are characterized and their applications to optoelectronic devices and ultra-large-scale integrated circuits (ULSI) is described.