高速双极器件制造中的离子注入技术

Ion Implantation for High Speed Bipolar Devices

本文讨论了高速双极器件制造中的离子注入技术。重点讨论在双极器件制造工艺中的离子注入掺杂技术,离子注入形成浅结技术,以及离子注入层的退火技术。根据这些要求,对离子注入设备应具有的技术性能作了一些预测。

Ion implantation technique for the fabrication of very high-speed bipolar circuits is discussed in the paper, with emphasis on the ion implantation doping and shallow junction formation and the annealing of the implanted layer in bipolar device process. In addition, technical requirements for ion implantation system is proposed.