摘要
本文研究了键合片Si/Si界面SiO_2层与材料、化学处理、键合条件及高温处理的关系,并研究了键合片中Si/SiO_2界面态与工艺的关系。
The dependence of the Si-Si interfacial layer on a bonded wafer upon the material, chemical treatment, bonding conditions and high temperature handling has been investigated. Also, the dependence of Si-SiO2 interface state in the bonded wafer upon process technology is described in the paper.
出处
《微电子学》
CAS
CSCD
1993年第1期11-14,共4页
Microelectronics
关键词
单晶硅
Si/Si界面
SOI
键合工艺
Crystalline silicon. Bonding, Si-Si interface. Interface state, SOI, SDB
