用1/f~γ噪声检测VLSI金属薄膜互连的电迁移

l/fv Noise Characterization of Electromigration in VLSI Metal Thin Film Interconnections

金属薄膜互连的电迁移现象是VLSI最重要的可靠性问题之一。然而,常规的电迁移评价方法均需要较长的试验周期,而且具有一定的破坏性。近年来发展的1/f~γ噪声检测电迁移的方法以其快速、经济、非破坏性的特点,显示出诱人的应用前景。本文介绍了这一方法的研究现状与展望。

Electromigration in metal thin film interconnection is one of the important problems for VLSI reliability. The conventional methods used for electromigratjon characterization require a long period of time and large stress for a test cycle,and therefore, the thin film structure could be changed to some extent. l/fv noise measurement developed in recent years has become a new method for electromigration characterization, which has such striking features as shorter test cycle. cost-effective and non-destructive measurement, hence an attractive application prospect. In the paper, the measuring techniques, the principle of characterization and results of the experiment using this method are presented.