硅双极晶体管1/f噪声的物理机制

Physical Mechanism of l/f Noise in Silicon Bipolar Transistors

在低频下,1/f噪声是硅双极晶体管的主要噪声。到目前为止,一般认为,1/f噪声有二种来源:表面态的存在和体内自由载流子迁移率的涨落。这两种1/f噪声有不同的表现形式。目前还没有统一的模型来描述1/f噪声,这是由于对1/f噪声的物理机理还没有一个完整、统一的理论。本文对已见发表的1/f噪声主要研究结果作了评述。

The 1 /f noise at low frequency is one of the main noises in silicon bipolar transistors. It is generally believed, so far, that the l/f noise originates from the surface states and the mobility fluctuation of free carriers as 'bulk' effect. These two noises appear in different forms. At present, there is no single model capable of describing. different l/f noises due to the lack of a deep insight into the physical mechanism of them. This paper presents a review of significant results from studies on 1/f