一种超高速八位移位寄存器

A Very High Speed 8-Bit Shift Register

介绍了一种超高速八位移位寄存器的设计和工艺制造技术。采用单元结构设计方法进行逻辑设计、电路设计、版图设计和整体设计,用3μm双埋层对通pn结隔离ECL技术进行工艺制作,其最高工作频率达到400MHz以上,工作温度范围为-55℃～85℃,比常规的TTL或者COMS移位寄存器工作频率高40倍。

The design of a very high-speed 8-bit shift register and its fabrication process are described in the paper. The cell structure is used for the design of logic,circuit and layout as well as overall planning. A 3-um ECL process is adopted to fabricate the device. A maximum operating frequency of 400MHz has been obtained, which is 40 times higher than that for a conventional TTL or CMOS shift register. The temperature range for the device is -55~85C.