集成双极晶体管基区表面电势的二维模型及其应用

A Two-Dimensional Model for the Base Surface Potential in Integrated Bipolar Transistors and Its Applications

基区表面电特性对双极器件影响很大,本文建立了集成双极npn晶体管基区表面电势的二维模型。文中还通过对采用SiO_2膜和Si_3N_4-SiO_2双层膜一次钝化的电容(MOS和MNOS)和栅控npn晶体管的表面电特性的研究,发现SiO_2-Si_3N_4一次钝化膜能有效地减小基区表面电势。

The electrical property of the base surface potential has a significant effect on bipolar devices. A two-dimensional model for the base surface potential has been set up for integrated bipolar n-p-n transistors. The surface electrical property of capacitors (MOS or MNOS) and gate-controlled n-p-n transistors passivated alternatively by SiO2 and SiO2-Si3N4 films has been investigated. It is found that the SiO2-SisN4 dual dielectric films of the first passivation can effectively reduce the base surface potentials.