多晶硅膜离子注入和扩散掺杂制备浅结的研究

A Study on the Doping of Polysilicon by Ion Implantation and Diffusion for Preparation of Shallow Junctions

本文对多晶硅膜离子注入掺杂和扩散掺杂制备浅发射结进行了实验研究。针对新型薄发射极晶闸管特性改善对薄发射极参数的要求,重点研究了采用不同方法时退火条件对薄发射区掺杂剖面、结深以及杂质总量的影响。管芯研究结果表明,在适当的退火条件下,离子注入掺杂制备浅结是改善器件特性较为理想的方法。

An experimental study has been carried out on the doping of polysilicon by ion implantation and diffusion for the preparation of shallow junctions. In accordance with the requirements on the parameters of thin emitter for improvements in the performance of thyristors with new thin emitters, effects of annealing conditions on the doping profile,junction depth and impurity amount for the thin emitter regions have been investigated using different methods. Test results show that the preparation of shallow junctions by ion implantation with proper annealing is an ideal technique for improvement in the device performances.