台面型自对准结构AlGaAs/GaAs HBT的工艺研究

Mesa-Type AlGaAs/GaAs HBT's Fabricated by a Fully Self-Aligned Process

本文提出了一种台面型全自对准结构AlGaAs/GaAs HBT的制造方案,对其中的欧姆接触金属系统的制备.AlGaAs/GaAs材料的选择性腐蚀及聚酰亚胺的反应离子刻蚀终点监控等关键工艺技术进行了研究。并给出了应用该工艺研制的HBT器件的初步结果.

This paper reports a fully self-aligned process for mesa-type AlGaAs/GaAs HBT's. Some critical issues including ohmic contact metallization, selective etching of AlGaAs/GaAs and end-point control of reactive ion etching process have been investigated.