sol-gel法制备ATO透明导电薄膜

Conductive ATO Thin Film Prepared by Sol-gel Method

以无水SnCl4为原料,通过sol-gel法制备出稳定性很好的SnO2溶胶并由此得到掺杂的SnO2薄膜。利用差热–热重分析、XRD、IR等手段分析了制备薄膜的sol-gel过程,同时运用Hall法测量了薄膜电性能随固化温度的变化。结果表明:Cl–的存在抑制了溶胶的聚合反应,故溶胶的稳定性得以保证,而溶胶的聚合是在薄膜的固化过程中完成的。薄膜中晶粒随固化温度升高呈现指数趋势增大,电阻率随固化温度的升高逐渐减小,在固化温度700℃时达到最低值3.7?·cm。

Anhydrous SnCl4 as raw material, doped SnO2 sol was prepared by sol-gel method which was very stable. Through the sol, the ATO thin film was got by dipping method. Sol-gel progress of this new method was studied by DSC-TG,XRD,IR measurements, and the conductivity of the thin film was measured by Hall method. The result indicated that the reason for stability of the sol was existence of the ion chlorine which inhibited the condensation reaction between the product of hydrolysis. And that particle size of thin film increased exponentially and the resistivity of ATO film decreased with increasing of the drying temperature, the minimum resistivity of 3.7 ?·cm reached at 700℃.