摘要
通过比较 PT 型和 NPT 型 IGBT 器件饱和导通特性,分析电流的均流问题及结温的影响,给出了IGBT 并联时选择器件的原则。
Compare PT type IGBT device with NPT type IGBT device in saturated conduction charater,anaylse uniform current problem and junction temperature influence and give the selecting principle of device in IGBT parallel operation.
出处
《电工技术》
2002年第8期22-23,共2页
Electric Engineering
