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VCSOA中光双稳环宽控制的理论分析 被引量:5

Theoretical analysis of the loop width control of bistablity in VCSOA
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摘要 基于法布里 珀罗(F P)腔光束干涉理论,建立垂直腔半导体光放大器 (VCSOA)的双稳模型。针对近期实验参数,仿真研究了透射模式下VCSOA的双稳特性,找到实现双稳环宽控制的 3种基本途径,即适当增大偏置电流、保持偏置与阈值比不变情况下提高顶端面反射率、减小初始相位失谐量都会使双稳环宽变宽。 Based on the beam interferential theory of Fabry-Perot semiconductor laser,a bistable model of vertical cavity semiconductor optical amplifier (VCSOA) was established. According to recently experimental parameters,the bistable characteristics of VCSOA are investigated by simulation and three methods of controlling the width of hysteresis loop have been achieved:to enhance the bias current properly,increase top mirror reflectivity of VCSOA without changing the ratio of bias current versus threshold current or decrease initial phase detuning.All the methods can increase the loop width of the hysteresis loop.
出处 《激光技术》 CAS CSCD 北大核心 2005年第1期74-76,共3页 Laser Technology
基金 国家自然科学基金资助项目 (10174057) 四川省应用基础研究基金资助项目(03JY029 048 1)
关键词 垂直腔半导体光放大器 双稳态 双稳环宽 光开关 VCSOA optical bistability hysteresis loop width optical switch
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参考文献10

  • 1陈建国,李焱,陆洋,李大义,周小红.用阈值表达式研究长外腔半导体激光器的双稳特征[J].光学学报,2000,20(8):1015-1020. 被引量:8
  • 2张晓霞,潘炜,刘永智,陈建国.降低VCSELs激射阈值途径的理论研究[J].光电子.激光,2002,13(12):1211-1214. 被引量:10
  • 3潘炜,张晓霞,罗斌,吕鸿昌,陈建国.端面反射率的波长特性对外腔半导体激光器调谐范围的影响[J].光学学报,2001,21(8):975-979. 被引量:14
  • 4ROYO P, KODA R, COLDREN L A. Vertical cavity semiconductor optical amplifiers:comparison of Fabry-Perot and rate equation approaches [ J]. IEEE J Q E ,2002,38 (3) :279 ~ 284.
  • 5TOMBLING G, SAITOH T, MUKAI T. Performance predictions for vertical cavity semiconductor laser amplifiers [ J]. IEEE J Q E, 1994,30( 11 ) :2491 ~ 2498.
  • 6SANCHEZ M, WEN P, GROSS M et al. Nonlinear gain in vertical-cavity semiconductor optical amplifiers [ J]. IEEE Photon Technol Lett,2003,15(1) :1 ~3.
  • 7AGRAWAL G P, DUTTA N K. Semiconductor lasers [ M ]. 2nd ed,New York .van Nostrand Reinhold Press, 1993. 495 ~499.
  • 8PAKDEEVANICH P,ADAMS M J. Measurements and modeling of reflective bistability in 1. 55μm laser diode amplifiers [J]. IEEE J Q E,1999,35(12) :1894 ~ 1903.
  • 9WEN P, SANCHEZ M, GROSS M et al. Vertical-cavity optical AND gate [J]. Opt Commun,2003,219(2) :383 ~387.
  • 10ADAMS M J,WESTLAKE H J,O' MAHONY M J et al. A comparison of active and passive optical bistability in semiconductors [ J]. IEEE J Q E,1985,21 (9) :1498 ~ 1502.

二级参考文献24

  • 1Y Hayashi,T Mnkainara,N Hatori,et al.Lasing characteristics of low threshold oxide confinement InGaAs-GaAlAs vertical-cavity surface-emitting lasers[J].IEEE Photon.Technol.Lett.,1995,7(11):1234-1236.
  • 2Y Qian,Z H Zhe,Y H Lo,et al.Long wavelength (1.3 μm) vertical-cavity surface-emitting lasers with a wafer-bonded mirror and an oxygen-implanted confinement[J].Appl.Phys.Lett.,1997,71(1):25-27.
  • 3F Koyama,S Kinoshita,K Iga.Surface emitting semi-conductor lasers[J].IEEE J.Quant.Electr.,1988,24(9):1845-1855.
  • 4G M Yang,M H Macdougal,V Pudikov,et al.Influence of mirror reflectivity on laser performance of very-low-threshold vertical-cavity surface-emitting lasers[J].IEEE Photon.Technol.Lett.,1995,7(11):1228-1230.
  • 5PAN Wei,ZHANG Xiao-xia,LUO Bin,et al.Theoretical Study on Tunable Output Charactristics of FRSLs[J].J.of Optoelectronics*Laser(光电子*激光),2001,12(5):446-450.(in Chinese)
  • 6T A Detemple,C M Herzinger.On the semiconductor laser lograrithmic gain-current density relation[J].IEEE J.Quant.Electr.,1993,29(5):1246-1252.
  • 7H Soda,Y Motegi,K Iga.GaInAsP/InP surface emitting injection lasers with short cavity length[J].IEEE J.Quant.Electr.,1983,19(6):1035-1041.
  • 8G P Agrawal,N K Dutta.Semiconductor lasers,2nd ed[M].New York:Van Nostrand Reinhold,1993.
  • 9SONG Jun-feng,FU Yan-ping,LIU Yang,et al.Analysis of vertical-cavity surface-emitting lasers small-signal modulation property[J].J.of Optoelectronics*Laser(光电子*激光),2000,11(4):345-348.(in Chinese)
  • 10Sun H,Appl Opt,1994年,33卷,21期,4771页

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