氮化硅钝化膜的制备和应用

Preparation and application of silicon nitride passivation film

利用电子回旋共振等离子体增强化学气相沉积技术在超高频大功率晶体管芯片表面沉积Si3N4钝化膜,实现了芯片的Si3N4薄膜钝化。对钝化前后的芯片测试表明,芯片经钝化后电特性有较好地改善,提高了反向击穿电压,降低了反向漏电流,提高了芯片的成品率。

The Si3N4 passivation films were deposited on the UHF high power semiconductor transistor chip by ECR-PECVD and the chip was passivated. The electric properties of passivated chip were analyzed. The results show that the electric properties of semiconductor chip have been improved, in which the reverse breakdown voltage is increased and the reverse leakage current is reduced. The ratio of finished product has been improved.