基片预处理工艺对CVD金刚石成核行为的影响

EFFECT OF SUBSTRATE PRE-TREATMENT ON CVD DIAMOND NUCLEATION

本文采用微波等离子体辅助化学气相沉积工艺,对不同预处理的(100)单晶硅基片上金刚石的成核行为进行了初步研究,并利用定量金相及扫描电子显微镜分析了金刚石的成核速率及晶体特征。由此提出了用0.1μm超细金刚石粉对基片的研磨工艺。该工艺可有效提高金刚石成核率,从而有助于获得晶粒细小均匀,表面粗糙度低的金刚石薄膜。采用C60涂复并结合研磨工艺,使成核率获得了进一步提高。

The effect of (100) Si substrate pre-treatment on CVD diamond nuclea-tion was studied by microwave plasma enhanced CVD,and the nucleation rate and crystal morphology were analyzed by quantitative metallography and SEM. A 0.1um diamond powder grinding pre-treatment method that will be an effective way for increasing diamond nucleation rate and thus helping to obtain small and uniform grain diamond films with low surface roughness. In combination of grinding and C60 coating, further improvement in nucleation rate was achieved.