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光热探针检测半导体离子注入剂量与均匀性 被引量：2

MEASUREMENT OF ION-IMPLANTED DOSE AND UNIFORMITY OF SEMICONDUCTOR BY PHOTO-THERMAL PROBE
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摘要 本文主要介绍光热探针技术的原理及其在半导体离子注入测试和监控中的应用。 The principle of photo-thermal probe technique and it's applications on mornitoring and measuring of ion-implanted semiconductors have been introduced.
作者 张淑仪 钱钟灵 陆悦生 何菁 张仲宇
机构地区 南京大学声学研究所
出处 《微细加工技术》 EI 1993年第2期23-32,共10页 Microfabrication Technology
关键词 离子注入 半导体 光热探针 检测 剂量 均匀性 ion implantation dose measurement photo-thermal probe
分类号 TN305.3 [电子电信—物理电子学]
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同被引文献18

  • 1Solid State Measurement, Inc. , SSM Applications Seminar on Process Monitoring with CV,QV and IV,1997.
  • 2D.K. Schroder. Semiconductor Material and Device Characterization. John Wiley&Sons, 1991.
  • 3B. Anders. Journal of Vacuum Sicence and Technology B. 1992, Vol. 10(1) :474.
  • 4A.Savitzky, M. J. E. Golay. Analytic Chemistry. 1964, Vol. 36 ( 8 ) : 1627.
  • 5K. Ziegler, E. Klausmann, S. Kar. Determination of the Semiconductor Doping Profile Right Up to Its Surface Using the MIS Capacitor, Solid State Electron. 1975,18:189 - 198.
  • 6Cyrus Shafai. Two Dimensional Delineation of Semiconductor Doping by Scanning Conductance Microscopy , Masters Thesis, University of Manitoba. 1992.
  • 7F. L. Jones. Physics of Electrical Contacts, Oxford University Press. 1957.
  • 8H. L Berkowitz. On the Application of Calibration Data to Spreading Resistance Analysis. Semiconductor Fabrication:Technology and Metrology, ASTM STP 990, D. Gupta, Ed. , American Society for Testing and Materials. 1989.
  • 9J. R. Ehrstein. Spreading Resistance Measurements - An Overview, Emerging Semiconductor Technology, ASTM STP 960, D. C. Gupta, and P. H Langer, Eds. , American Society for Testing and Materials. 1986.
  • 10M. Pawlik. Spreading Resistance : A Comparison of Sampling Volume Correction Factors in High Resolution Quantitative Spreading Resistance, Emerging Semiconductor Technology, ASTM STP 960, D. C. Gupta,and P. H Langer, Eds. , American Society for Testing and Materials. 1986.

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微细加工技术
1993年 第2期

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