摘要
着重研究了γ辐照后,不同偏置情况下,N—Sub MOS电容的高频C—V曲线随B_2^+注入剂量的变化,并对实验结果进行了分析讨论。
It has been studied that the N-sub MOS capacitor's High Frequency C-V under different biased changes with BF2+ implanted dose after irradition. The result of experiments has been analysed and discussed.
出处
《微细加工技术》
1993年第2期33-36,共4页
Microfabrication Technology
基金
国家自然科学基金
