摘要
本文介绍了一台低能全元素离子注入机。它的能量范围为5～60keV;离子品种是从~1H到^(209)Bi;最低能量5keV的As^+、Se^+等重离子的靶流为2～5μA;注入靶片φ50;注入均匀度σ<3％;注入温度:室温～400℃可调。已制备出0.1μm以下的GaAs超薄有源层和硅超浅结。
A Low energy all-element ion implanter is discribed. It's energy range is from 5 to 60 keV and the ion species from 1H+ To 209Bi+.The beam currents on the target for As+ or Se+ at 5 keV are 2~5uA, The size of implanted substrate is φ50.Uniformity of implantation is less than 3%. Implanted temperature is adjustable from R.T to 400℃.The GaAs super thin active layer and silicon shallow junction in the 0.1um range or below has been obtained.
出处
《微细加工技术》
1993年第3期12-16,共5页
Microfabrication Technology
基金
国家自然科学基金资助
关键词
离子注入机
超薄有源层
掺杂
low energy all-element ion implanten super thin active layen super shallow junction
