金刚石薄膜低压气相生长中衬底表面缺陷的成核理论

NUCLEATION MECHANISM OF CONCAVE STRUCTURE ON SUBSTRATE SURFACE IN DIAMOND ROWTH BY MEANS OF LOW PRESSURE VAPOR DEPOSITION

在低压气相生长金刚石薄膜过程中,通过在衬底表面引入缺陷,通常是一种行之有效的提高成核密度的方法。但是,至今尚无公论的关于这种缺陷成核机制的详细报导和理论解释。本文在实验观测的基础上,提出了金刚石膜在衬底表面凹陷结构缺陷内成核的理论,并且讨论了该理论对于试图通过控制衬底表面缺陷来控制金刚石膜成核密度等人工微结构设计研究的意义。

To increase nucleation density, the methods of introducing defects on substrate surface are more effective in the diamond thin films growth by means of the low pressure vapor phase deposition. Howerer,up to date,almost no detailed studies of the nucleation mechanisms of introducing defects have been made .Based on the experimental results we have put forward the nucleation mechanism of the concave structure defects on substrate surface in diamond thin films growth. The effects of the theory on controlling diamond nucleation density through controlling surface defects on the substrate have been discussed.