摘要
本文采用金属有机物热分解(MOD)法制备SnO_2薄膜,探索了锑掺杂对薄膜电阻的调制,通过I—V特性发现Al/SnO_2系统存在零电压电位,最后还测试了薄膜的气敏特性。
SnO2 thin films, which were doped with antimony to modulate resistance, have been fabricated by Metallo-Organic Deposition (MOD) . According to the I-V Curves, zero-voltage potential was found in Al/Sn02 systems. Finally, the gas-sensing characteristics of the films were studied.
出处
《微细加工技术》
1993年第4期35-39,共5页
Microfabrication Technology
关键词
氧化锡
薄膜
MOD法
MOD
SnO2 thin film
gas sensors
