摘要
本文介绍了腐蚀挖槽和硅中P、N型杂质一步扩散掺杂的晶闸管制造工艺,应用该技术提高了产品的性能/价格比。
The process of thyristor by etching groove and doping with P-N type dopants in one step is introduced.Higher ratio of performance to cost of products is obtwined by this technology.
出处
《微细加工技术》
EI
1993年第4期63-66,共4页
Microfabrication Technology
关键词
晶闸管
掺杂
杂质
腐蚀挖槽
制造
etching groove
doping in one step
thyristor
