CoZrNb磁控溅射的背散射研究

INVESTIGATION OF BACK SCATTERING OF CoZrNb IN MAGNETRON SPUTTERING

对于各组份原子质量相差显著的CoZrNb合金,当使用磁控溅射时,在靶和基板之间存在不同的实际源,由这个实际源发生的粒子将在靶死区内背散射沉积。实际源到靶的距离随溅射工作气体压力而变化。对于原子质量较大的Zr和Nb,这种背散射的程度要比原子质量小的Co更严重。背散射沉积薄膜的表面微结构证实,这种背散射沉积过程类似于真空蒸发。为了获得理想配比的CoZrNb薄膜,应该选择合适的溅射工作气体压力。

There are different virtual sources between target and substrate in magnetron sputtering of CoZrNb alloy, which has obvious different atomic mass of each component. The particles from this virtual source will be, back scattering deposited on the dead zone of the target. The distance of this virtual source to target varies with sputtering gas pressure.The back scattering deposited particles of Zr and Nb are more than that of Co, because former have bigger atomic mass. The surface microstructure of the back scattering deposited film shown that this back scattering deposition process is similar to the vacuum vapour process. Suitable sputtering gas pressure should be choiced in order to obtain ideal composed CoZrNb film.