摘要
本文利用高温模型,计算了在我们的实验条件下对离子注入硅进行线源非相干光瞬时退火的退火温度,并与实验结果比较,两者符合得较好。
In this thesis,an isothermal model is used to calculate temperature in transient annealing of ion implanted silicon using an incoherent light line source,a comparison is done between calculating and experimental results.lt is found that both are approximately agreeable.
出处
《微细加工技术》
1993年第4期72-76,共5页
Microfabrication Technology
关键词
离子注入
光退火
温度计算
硅
掺杂
ion implantation
light transient annealing
temperature calculation
