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E型碳化硅压力传感器的优化设计 被引量:8

Optimal Design of an E-type SiC Pressure Sensor
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摘要 描述了一种性能优越的SiC压力传感器的理论和仿真运用基于小扰度的解析模型计算出了这种传感器的应变分布。根据应变分布规律优化设计了传感器的力敏电阻。利用ANSYS软件分析了该传感器的一些重要特性。与传统的传感器 (圆膜传感器 )相比 ,量程为 5 0 0kPa的该传感器表现出优异的灵敏度 (2 4 8μV/V .kPa)和非线性度小于 0 0 8%。仿真结果与测量结果基本一致。 The paper describes the theory and simulation data for a SiC pressure sensor featuring variety of advantages due to a novel design. Analytical models based on small deflection theories were applied to calculate the strain distribution of the sensor. According to the law of strain distribution, piezoresistors of the sensor have been optimally designed. Some important properties of the sensor were analyzed by using ANSYS software. In comparison to familiar sensor concepts (circular diaphragm sensor), the sensor designed for pressure range of 500kPa exhibits an excellent sensitivity: S =24 8 μV/V.kPa and nonlinearity: NL < 0 08%. The simulation results are consistent with the measurement results.
出处 《传感技术学报》 CAS CSCD 2004年第4期611-614,618,共5页 Chinese Journal of Sensors and Actuators
基金 国防科技预研基金资助项目
关键词 碳化硅 压力传感器 ANSYS E型结构 SiC pressure sensor ANSYS e-type structure
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  • 1Shor J S, Goldstein, D, Kurtz A D. Solid-State Sensors and Actuators[J].1991. Digest of Technical Papers, TRANSDUCERS '91, 1991 International Conference on, June 1991,24-27:912-915.
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  • 3Ziermann R, von Berg J, Reichert W, Obermeier, E. Eickhoff M. Krotz G.Solid State Sensors and Actuators[C].In:1997. TRANSDUCERS '97. Chicago: 1997 International Conference on, 16-19 June 1997,2:1411-1414.

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