摘要
本文从材料设计的角度出发,参考电容-压敏复合功能陶瓷的理想结构,通过 Sb_2O_5施主掺杂控制材料的晶粒电阻率,借助 MnO_2的掺杂,调节材料的晶界势垒高度,探讨了它们对压敏特性和电容特性的影响.文中还对非线性系数、介电常数的理论值和实验值进行了比较.
In this article,the ideal structure of capacitor-varistor multi-function ceramics is referred
to.The grain resistivity is controlled by doping Sb_2O_5(as donor),and the grain boundary
threshold voltage is controlled by doping MnO_2.
How the doping of these elements influences varistor property and capacity is studied.The
theoretic value and the experimental value of non-linear coefficient and dielectric constant are
compared.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
1993年第3期288-294,共7页
Journal of Inorganic Materials
关键词
二氧化钛
压电陶瓷
电性能
Titanium dioxide
Boundary barrier
Multi-function
Varistor
Capacity
