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多晶硅薄膜和金属铝接触的研究 被引量:1

Research on Poly-Si/Al Contact
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摘要 研究了n型多晶硅薄膜和铝的欧姆按触、整流接触。在掺杂浓度N≥2.9×1019 cm-3的情况下为欧姆接触:在掺杂浓度N≤2.9×1018cm-3的情况下为整流接触; 用TLM方法测出了N=2.9×1019cm-3时的接触电阻率ρc=5.54×10-3Ω.cm2; 从理论上定量地分析了掺杂浓度(1.4×1017~2.9×1019)cm-3的U-I特性曲线.理 论计算结果和实验数据符合较好.讨论了肖特基势垒高度φb和晶粒间界势垒高度φg 随掺杂浓度变化的规律,φb不随N变化,保持为常数;而φg却有极值。在实验 方面.探讨了用Ti代替A1实现低阻浅结欧姆接触的可能性。在掺杂浓度较低的情 况下,给出了制备欧姆接触的方法。 N-type Poly-Si/Al oh mic and rectified contacts have been investigated for (N=2.9 ×1018cm-3) and (N≤2.9×1018cm-3) doping respectively.Using TLM method, the contact resistivity (ρc=5.54 ×10-3 Ω· cm2) is obtained from the measurement of (2.9 × 1019cm-3) doping sample. At Al sintering tempera-ture<4500C, the contact resistivity of n-type Poly-Si/silicide/Al is two orders lower than that of Poly-Si/A1 at (2.0×1019cm-3) doping. U-I characteristics with doping concentration (1.4×1017~2.9×1019)cm-3 have been analyzed quantitatively. A way to form oh mic contact of n-type Poly-Si/Al with light doping concentration is proposed. By comparing theoretical and experimental results, it is found that Schottkg barrier height φb is independent of doping concentration and grain boundary barrier height φg varying with doping concentration has a maximum.
出处 《大连理工大学学报》 EI CAS CSCD 北大核心 1989年第2期197-202,共6页 Journal of Dalian University of Technology
关键词 多晶硅 薄膜 欧姆接触 polycrystal silicon film thin film aluminium oh mic contact rectifying contact/contact resistivity doping concentration
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