以高氢稀释硅烷为反应气源沉积硅薄膜

Silicon Films Grown by PECVD in a High Concentration of Hydrogen-diluted Silane

以高浓度比的氢稀释硅烷为反应气源，在ＰＥＣＶＤ 薄膜沉积系统中利用高频等离子体中［Ｈ］基对生成膜表面弱Ｓｉ－Ｓｉ键的腐蚀作用，能有效地改善沉积硅膜中网络结构的完整性．并促使其成核生长，从而能沉积出高质量的ａ－Ｓｉ：Ｈ膜以及具有纳米相结构的ｎｃ－Ｓｉ：Ｈ膜．

The use of high concentration hydregen-diluted silane as the reactant gas to grow silicon films in a PECVD system can eliminate the weak Si-Si bonds through the etching effect of the [H] radical in the plasma. Thus the network structure may be improved and silicon atom nu-cleation promoted. High quality a-Si : H films and nc-Si: H films with nano-phase morpholo-gy have been produced by the method.