n型砷化镓微区光电化学腐蚀过程

PHOTOELECTROCHEMICAL MICROETCHING OF n-GaAs

在n-GaAs电解液界面,用聚焦He-Ne 激光照射,使n-GaAs 表面发生微区光电化学腐蚀,用计算机控制步进马达,使试样在X-Y二维方向扫描移动,能在晶片上得到刻蚀点直径2μm 的刻蚀图案.研究了激光相对光强,KOH、H_2SO_4、KCl 等刻蚀剡的浓度,光腐蚀的时间,电极电位等因素对腐蚀点的直径和深度的影响,通过实验数据找出腐蚀过程的规律,并用光电化学原理进行解释.

Microphotoelectrochemical etching of n-GaAs by focused He-Ne laser was inven-stigated.An etched pattern was scribed on the n-GaAs surface while the sample movedin X-Y two directions by means of two motors controlled by microcomputer.Thediameter of the etched holes was 2μm.The intensity of the laser light,the concen-trations of different etchants,such as KOH,H_2SO_4,HCl and KCl etc.,the etchingtime,the electrode potentials effected the diameters and depths of the etched holes.The experiment results were discussed and analyzed in this paper.