分子束外延生长AlGaAs/GaAs GRINSCH SQW激光器中高温陷阱的研究

STUDIES ON HIGH TEMPERATURE TRAP OF AlGaAs/GaAs GRIN SCH SQW LASER FABRICATED BY MBE

应用深能级瞬态谱(DLTS)技术研究分子束外延(MBE)生长的AlGaAs/GaAs gradedindex separate confinement heterostructure single well(GRIN-SCH SQW)激光器的高温陷阱。样品的DLTS表明,在激光器的n-AlGaAs层里存在着高温(空穴、电子)陷阱,它直接影响着激光器的性能。高温空穴陷阱可能分布在x_(Al)=0.2→0.43和x_(Al)=0.43的n-AlGaAs层界面附近,而高温电子陷阱则可能分布在X_(Al)=0.43的n-AlGaAs层里X_(Al)值不连续的界面附近。高温电子陷阱的产生可能与AlGaAs层里的O有关。

The high temperature traps of AlGaAs/GaAs GRIN-SCH SQW lasers fabricated by MBE has been studied using DLTS technique.The majority and minority carrier DLTS spectra show that high temperature trap, having larger capture cross section and concentration, exist in n-AlGaAs layer of lasers. This trap may correlate strongly with oxygen content of AlGaAs layer grown by MBE. It may be responsible for the degradation of laser performance. High temperature hole trap may spatially localize between the interface of xA1 = 0.2→0.43 and xA1 = 0.43 n-AlGaAs layers. And high temperature electron trap may spatially localize in the interface regions of discontinous variation Al mole fraction of AlGaAs layer with xA1= 0.43.