摘要
用热丝化学汽相沉积(HFCVD)技术在si(111)和si(100)衬底上获得了高质量的金刚石膜。并随着生长时间的增加,利用X射线光电子能谱(XPS)和俄歇电子能谱(AES)研究了过渡层中碳硅化合物组分的变化及其作用。同时提出渐变过渡层:Si/Si_(1-x)C_x/SiC/Si_yC_(1-y)/金刚石模型。当组分参量x与y在0.1—0.25之间取值时,用Keating方法给出了系统的稳定结构。
High-quality diamond films are grown on Si substrate by hot filament chemcial vapor de-position (HFCVD). With increase of growth time, pure carbon species and mixtures of them are also identified by X-ray photoelectroscopy (XPS) and auger electron spectroscopy (AES). To describe the buffer layers, a gradient model is proposed as Silicon/Si1-xCx/SiC/SiyC1-y/ Diamond. Within the range of 0.10 <x, y< 0.25, the structural stability is studied by Keating potential.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1993年第2期309-313,共5页
Acta Physica Sinica
