非晶Nd-Fe薄膜电阻的温度效应与非晶稳定性

TEMPERATURE DEPENDENCE OF ELECTRIC RESISTIVITY OF Nd-Fe AMORPHOUS THIN FILMS AND ITS THERMAL STABILITY

用闪光蒸镀法在77K制备了Nd_xFe_(1-x)(x=0.06-0.80)非晶薄膜,原位测定了其电阻随温度的变化。结果表明:在0.19<x<0.50的成分范围内,非晶膜在室温下是稳定的。在晶化以前,薄膜的比电阻与温度的关系可分为三个阶段,即ρ(T)∝InT,ρ(T)∝T^2和ρ(T)∝T。晶化不是在一个固定的温度,而是在一个温度区间发生。

The NdxFe1-xamorphous thin films with x=0. 06- 0. 80 were prepared at 77 K by flash evaporation. The results show that the amorphous films are stable at room temperature when 0. 19<x<0.50. When the amorphous films are tempered from 77 K, its resistivity decreases logarithmically and passes through a minimum at temperature Tm, then increases in proper order with T2 and T untill the crystallization occurs. The crystallization of the amorphous films can not be completed at a certain fixed temperature but over a temperature range.