摘要
测量了含碳量高低不同的(110)取向的调制掺杂GaAs-Al_(0.3)Ga_(0.7)As单异质结在4.2K下的光致荧光谱。在含碳量高的样品中,出现了强的沟道二维电子到受主的复合荧光峰;而在含碳量很低的样品的光致荧光中则只出现体GaAs的荧光峰。
The photoluminescence spectra of ( 110 ) modulation-doped GaAs-AlGaAs het-erostructures grown under high and low carbon background were measured at 4. 2K. For high carbon specimen the luminescence peak from the recombination of 2D electrons in channel with holes bound to neutral acceptors was observed, while for low carbon specimen only lines related to bulk GaAs were observed.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1993年第9期1529-1531,共3页
Acta Physica Sinica
关键词
砷化镓
异质结
光致发光
荧光
Carbon
Photoluminescence
Semiconducting aluminum compounds
Semiconducting gallium compounds
