振子强度密度理论研究——类锂离子3s态到p通道跃迁振子强度密度

THEORETICAL STUDY IN OSCILLATOR STRENGTH DENSITY——Oscillator Strength Density from 3s State to p-Channel States for Li-like Atomic Inos

以类锂离子3s态到p通道光跃迁为例,在单通道理论框架下统一处理从一个初态(3s)到一个通道(p通道)中无数个激发态(包括束缚态np和连续态εp)的光跃迁过程。具体地根据相对论性和非相对论性原子自洽场理论,分别计算了类锂离子3s态到p通道跃迁的有关振子强度密度,阐明了其相对论效应以及振子强度密度随原子序数变化的标度规律。根据本文所计算的振子强度密度,可方便地获得3s跃迁至所有np束缚激发态的振子强度。

Based on the relativistic and non-relativistic self-consistent-field methods, we have calculated the oscillator strength density from 3s state to p-channel states for Li-like atomic ions. The dependence of the oscillator strength density on atomic number and some related relativistic effects are discussed. Using the calculated oscillator strength density as interpolation benchmark points, one can easily obtain oscillator strengthes of all 3s-np transitions for Li-like atomic ions (3≤z≤92).