摘要
在晶化的α-Si:H/α-SiN_x:H多层膜结构中,当α-Si:H子层厚度L_s≤40A时,我们首次观察到室温下可见光致发光现象。72层多层异质结构是采用计算机控制等离子体增强化学汽相淀积(PECVD)技术制备的,利用Ar^+激光辐照技术使α-Si:H层获得晶化。由X光衍射谱,喇曼散射谱及剖面透射电子显微技术揭示了晶化硅多层膜样品的结构和结晶特性。我们用量子尺寸效应解释了光致发光峰的光子能量与α-Si:H子层的厚度及结晶完整性之间的关系。
Visible Photoluminescence has been observed in crystallized a -Si : H/a -SiNx : H multilayer structures at room temperature. The multilayer heterostructures consisting of 72 layers were formed by computer controlled plasma enhanced chemical vapor deposition method and then crystallized by Ar+ laser annealing technique. The crystallinity and average grain size of the silicon microcrystals were determined by means of cross section TEM,Raman and x-ray diffraction spectroscopy. The crystallized samples with well layer thickness Ls = 40 A showed an intense photoluminescence which is peaked at 2. 0 eV with a full width at half maximum of 0. 25 eV. This is consistent with calculations based on the quantum confinement model.
出处
《物理学进展》
CSCD
北大核心
1993年第1期291-298,共8页
Progress In Physics
基金
国家自然科学基金的资助
